description: main features symbol value unit i t( rms ) 2 a i gt 200 a v tm 1. 5 v absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 1 10 repetitive peak off - state voltage v drm 600 v repetitive peak reverse voltage v rrm 600 v rms on - state current i t(rms) 2 a @ (t c = 72 ) non repetitive surge peak on - state current (tp=10ms) i tsm 20 a i 2 t value for fusing (tp=10ms) i 2 t 2 a 2 s critical rate of rise of on - state current di/dt 50 a / s peak gate current (tp=20 s , tj=110 ) i gm 0.2 a peak gate power (tp=20 s , tj=110 ) p gm 0.5 w average gate power dissipation(t j = 110 ) p g(av) 0.1 w a(2) k(1) g(3) r gk thinkisemi 2P4M scr with the parallel resistor between gate and cathode are especially recommended for use on straight hair, igniter, anion generator etc.. internal structure to-202 pkg outline 1 2 3 ? 2P4M pb free plating product 2P4M 2.0 ampere passivated process thyristor---sensitive gate scr pb ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/3 rev.05
electrical characteristics ( t j =25 unless otherwise specified ) symbol test condition value unit min. typ. max. i gt v d =12v r l = 3 3 - 40 200 a v gt - 0.5 0.8 v v gd v d =v drm t j =1 10 0.2 - - v i l i g = 1.2 i g t - - 3 ma i h i t = 0.05 a - - 2 ma dv/dt v d = 60% v drm t j =1 10 r gk =1k 10 - - v / s static characteristics symbol parameter value(max) unit v tm i t m = 4 a tp=380 s t j =25 1. 5 v i drm v d =v d rm v r =v r rm t j =25 5 a i rrm t j =1 10 10 0 a thermal resistances symbol parameter value unit r th(j - c) junction to case /w to-202 heat sink 10 ? 2P4M ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/3 rev.05
fig.3: surge peak on-state current versus number of cycles fig.6: relative variations of gate trigger current, holding current and latching current versus junction temperature fig.1 maximum power dissipation versus rms on-state current fig.5: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of i t (di/dt < 50a/ s) fig.4: on-state characteristics (maximum values) fig.2: rms on-state current versus case temperature i t(rms) (a) to-202 p(w) 0 0.5 1 1.5 2 2.5 0 1 2 3 i t(rms) (a) tc ( ) 0 1 2 3 0 25 50 75 100 125 1 10 100 1000 number of cycles 0 3 6 12 15 18 21 i tsm (a) i tm (a) v tm (v) 0 1 2 3 4 5 1 10 tj=25 tj=tjmax tp(ms) 0.01 0.1 1 10 1 10 100 300 i tsm (a), i t (a s) -40 0 40 80 120 i gt ,i h ,i l (tj)/i gt ,i h ,i l (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 9 20 i gt i h &i l tj( ) 2 2 2 i tsm i t 2 0.1 =180 one cycle tp=10ms di/dt ? 2P4M ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 3/3 rev.05
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